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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3740 2N3741 DESCRIPTION With TO-66 package Excellent safe area limits Low collector saturation voltage APPLICATIONS Suitable for use in as drivers,switches and medium-power amplifier and applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER VCEO VEBO IC ICM IB PT Tj Tstg INCH Base current Collector-emitter voltage E SEM ANG 2N3741 2N3740 2N3741 2N3740 Open emitter OND IC CONDITIONS CTOR U VALUE -60 -80 -60 -80 -7 -4 -10 -2 UNIT V Open base V V A A mA W ae ae Emitter-base voltage Open collector Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 25 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 7.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N3740 IC=-100mA ; IB=0 2N3741 VCEsat VBE Collector-emitter saturation voltage Base -emitter on voltage 2N3740 2N3741 2N3740 2N3741 IC=-1A ;IB=-125mA IC=-0.25A ; VCE=-1V VCE=-60V;VBE(off)=-1.5V VCE=-40V;VBE(off)=-1.5V;TC=150ae VCE=80V;VBE(off)=1.5V VCE=60V;VBE(off)=1.5V;TC=150ae VCE=-40V; IB=0 CONDITIONS 2N3740 2N3741 SYMBOL MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -0.6 -1.0 -0.1 -1.0 mA -0.1 -1.0 V V ICEX Collector cut-off current ICEO Collector cut-off current -1.0 VCE=-60V; IB=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VEB=-7V; IC=0 mA ICBO Collector cut-off current 2N3740 2N3741 IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB CHAN IN Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Output capacitance SEMIC GE IC=-0.1A ; VCE=-1V IC=-0.25A ; VCE=-1V IC=-0.5A ; VCE=-1V IC=-1A ; VCE=-1V O CTOR NDU -0.1 -0.5 40 30 20 10 3.0 100 100 mA mA IC=-0.1A ; VCE=-10V;f=1.0MHz IE=0 ; VCB=-10V;f=100kHz MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N3740 2N3741 CHAN IN SEMIC GE O CTOR NDU Fig.2 Outline dimensions 3 |
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